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STS ETCH Rate Values |
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PECVD |
PECVD |
Themal |
Themal Ox |
Low Stress |
Regular |
Resist |
Resist |
Resist |
Resist |
Bare Si |
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Nitride-340 |
Oxide-340 |
Oxide |
With Resist |
Nitride |
Nitride |
1813 |
1818 |
HNR 80 |
5214 |
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| RECIPE |
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| NIT 1 |
2575 |
406 |
367 |
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868 |
~ 800 |
869 |
736 |
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816 |
700 |
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| NIT 2 |
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173 |
148 |
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437 |
94 |
366 |
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730 |
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| NIT 3 |
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55 |
43 |
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140 |
94 |
142 |
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514 |
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| FASTPOLY |
5615 |
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216 |
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640 |
~ 880 * |
713 |
>600 |
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662 |
~ 26,000 * |
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| PJSNITD1 |
2492 |
597 |
572 |
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213 |
1243 * |
132 |
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| SLOWPOLY |
3253 |
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53 |
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22 |
250 |
151 |
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~ 8000 * |
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| TYB-TEST |
2673 |
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317 |
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99 |
~ 230 * |
60 |
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367 |
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| PJSOXIDE |
2814 |
337 |
303 |
226 |
224 |
~ 220 * |
124 |
93 |
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92 |
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| O2CLEAN |
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1500 |
1450 |
1612 |
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-4 |
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Etch values are listed in Ang per min rate, using only a single wafer, resist values are for hard baked layers. |
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All values listed should be within 10% of those posted. These values are only a guide. |
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For more exact etch rates testing should be done by the user with the intended material. |
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* Means these recipes can have large varying etch values, test etch rate on a test sample first. |
29-Jul-04 |
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