Aluminum RIE Process for the Trion

       

          1.  O2 clean the chamber with the holder in place
           
          •  15 minutes.
          • 300 mTorr
          • 50 sccm  02
          • 100 Watts
           

          2.  Transfer wafer to etch chamber and purge with Argon
           

          • 5 minutes.
          • 200 mTorr
          • 50 sccm Argon
           

          3.  Aluminum oxide breakthrough
           

          • 60 seconds
          • 15 sccm Cl2
          • 30 sccm BC13
          • 200 mTorr
          • 100 watts
           

          4.  Aluminum Etch
           

          • Continue 2 minutes beyond clear
          • 8 sccm C12
          • 30 sccm BC13
          • 30 mTorr
          • 25 watts
           

          5.  Etch Chamber Argon Purge
           

          • 3 cycles
            • Argon 30 seconds on
            • Argon 30 seconds off
          • 200 mTorr
          • 50 sccm Argon
         
          6.   After unloading the wafer, rinse for at least 1 minute in DI water  then  remove all remaining photoresist.
                  This will inhibit corrosion from occuring
         
       NOTES:
      • The Al etch rate is on the order of 1000 A/minute.
      • PECVD Oxide= ~21 Ang/min. PECVD Nitride = ~ 40 Ang/min. Thermal oxide = ~23 Ang/min.
      • There might be a change in the plasma color from green to light sky blue when the  Aluminum oxide is broken through.
      • Perform the standard photolithography process as the Al masking layer.
      • Bake the wafer for 60 seconds on a 90 degree hot plate just prior to loading into the RIE.